product benefits ? low losses ? low noise switching ? cooler operation ? higher reliability systems ? increased system power density product features ? ultrafast recovery times ? soft recovery characteristics ? popular sot-227 package ? low forward voltage ? high blocking voltage ? low leakage current ? avalanche energy rated product applications ? anti-parallel diode -switchmode power supply -inverters ? free wheeling diode -motor controllers -converters ? snubber diode ? uninterruptible power supply (ups) ? induction heating ? high speed recti?ers ultrafast soft recovery rectifier diode apt2x61dq100j 1000v 60a APT2X60DQ100J 1000v 60a 053-4233 rev b 7-2006 new diode data sheet by darel bidwell anti-parallel parallel 2 1 3 2 3 4 1 4 APT2X60DQ100J apt2x61dq100j static electrical characteristics symbol v f i rm c t unit volts a pf min typ max 2.2 2.8 2.67 1.68 100 500 80 characteristic / test conditionsforward voltage maximum reverse leakage current junction capacitance, v r = 200v i f = 60a i f = 120a i f = 60a, t j = 125c v r = 1000v v r = 1000v, t j = 125c dual die isotop ? package maximum ratings all ratings: t c = 25c unless otherwise speci?ed. characteristic / test conditionsmaximum d.c. reverse voltage maximum peak repetitive reverse voltage maximum working peak reverse voltage maximum average forward current (t c = 90c, duty cycle = 0.5) rms forward current (square wave, 50% duty)non-repetitive forward surge current (t j = 45c, 8.3ms) avalanche energy (1a, 40mh)operating and storagetemperature range symbol v r v rrm v rwm i f(av) i f(rms) i fsm e avl t j ,t stg unit volts amps mj c apt2x61_60dq100j 1000 6077 540 20 -55 to 175 microsemi website - http://www.microsemi.com sot-22 7 isotop ? 1 2 3 4 file # e145592 "ul recognized" downloaded from: http:///
apt2x61_60dq100j dynamic characteristics 053-4233 rev b 7-2006 new diode data sheet by darel bidwell z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1a. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.600.50 0.40 0.30 0.20 0.10 0 0.5 single pulse 0.1 0.3 0.7 0.05 figure 1b, transient thermal impedance model peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: thermal and mechanical characteristics min typ max - 36 - 235 - 445 - 5 - - 285 - 2290 - 13 - - 125 - 4170 - 50 unit ns nc amps ns nc amps ns nc amps characteristicreverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test conditions i f = 60a, di f /dt = -200a/ s v r = 667v, t c = 25 c i f = 60a, di f /dt = -200a/ s v r = 667v, t c = 125 c i f = 60a, di f /dt = -1000a/ s v r = 667v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c characteristic / test conditionsjunction-to-case thermal resistance rms voltage (50-60hhz sinusoidal wavefomr ffrom terminals to mounting base for 1 min.) package weightmaximum mounting torque symbol r jc v isolation w t torque min typ max .56 2500 1.03 29.2 10 1.1 unit c/w volts oz g lb?in n?m d = 0.9 microsemi reserves the right to change, without notice, the speci?cations and information contained herein. 0.148 0.238 0.174 0.006 0.0909 0.524 dissipated power (watts) t j (c) t c (c) z ext are the external thermal impedances: case to sink, sink to ambient, etc. set to z ero when modeling only t he case to junction. z ext downloaded from: http:///
053-4233 rev b 7-2006 apt2x61_60dq100j typical performance curves t j = 125 c v r = 667v 30a 60a 120a t rr q rr q rr t rr i rrm 350300 250 200 150 100 50 0 6050 40 30 20 10 0 duty cycle = 0.5 t j = 175 c 0 25 50 75 100 125 150 25 50 75 100 125 150 175 1 10 100 200 100 9080 70 60 50 40 30 20 10 0 1.41.2 1.0 0.8 0.6 0.4 0.2 0.0 400350 300 250 200 150 100 50 0 c j , junction capacitance k f , dynamic parameters (pf) (normalized to 1000a/ s) i f(av) (a) t j , junction temperature ( c) case temperature ( c) figure 6. dynamic parameters vs. junction temperature figure 7. maximum average forw ard current vs. casetemperature v r , reverse voltage (v) figure 8. junction capacitance vs. reverse voltage 200180 160 140 120 100 8060 40 20 0 60005000 4000 3000 2000 1000 0 v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 2. forward current vs. forward voltage figure 3. reverse recovery ti me vs. current rate of change -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 4. reverse recovery charge vs. current rate of change figure 5. reverse recovery curr ent vs. current rate of change 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j = 175 c t j = -55 c t j = 25 c t j = 125 c t j = 125 c v r = 667v 120a 60a 30a t j = 125 c v r = 667v 120a 30a 60a downloaded from: http:///
apt2x61_60dq100j 053-4233 rev b 7-2006 apt10035lll 4 3 1 2 5 5 zero 1 2 3 4 di f /dt - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current. t rr - reverse r ecovery time, measured from zero crossing where diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero. figure 9. diode test circuit figure 10, diode reverse recovery waveform and definitions 0.25 i rrm pearson 2878 current transformer di f /dt adjust 30 h d. u.t. +18v 0v v r t rr / q rr waveform anode 1 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m4 h100 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) anode 2 anti-parallel parallel ca thode 1 r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) cathode 2 anode 1 cathode 2 anode 2 cathode 1 sot-227 (isotop ? ) package outline APT2X60DQ100J apt2x61dq100j isotop ? is a registered trademark of st microelectronics nv. downloaded from: http:///
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